Posts on Jan 1970

U7-E09. Interferometer

• Interferometer

– Measurement modes:
o Vertical Shift Interferometry (VSI), based on white light vertical scanning interferometry, is used for measuring features in the range of 140 nm to several µm.
o Phase Shift Interferometry (PSI), based on optical phase shifting, is dedicated to roughness measurements. Small features (1 to 140 nm) can be measured.
– The system has an automated stitching stage for large area coverage.E40
– Light Source: tungsten halogen lamp. Its brightness can be adjusted.
– 2 objective lenses included with the interferometer are available: Michelson (5.0X) and Mirau (50X).
– Field-of-View (FOV) Lenses available: 0.5, 1.0 and 2.0. FOV are lenses placed between the camera and the objective lens to adjust the field size of view.
– CCD camera to transfer the images to a computer for analysis.
– Software Vision32®. Enables advanced calculations of various surface parameters and image processing.

– Performance:
o Vertical measurement range: 0.1 nm to 1 mm
o Vertical resolution: 1 < 1 Å Ra
o Vertical scan speed up to 7.2 µm/sec
o Lateral spatial sampling 0.08 to 13.1 µm
o Field-of-View 8.24 mm to 0.05 mm (larger areas with data stitching mode)

U7-E08. Plasma Cleaner

• Plasma Cleaner

•- Processing method available: Oxygen or air plasma
•- Chamber dimensions: 3” diameter by 7” deep
•- Adjustable RF Frequency: 8 -12 MHz
•- Power settings: Low (6.8 W), medium ( 10.5 W) and high (18 W)

U7-E06. Thermal and e-beam metal evaporator

• Electron-beam evaporator

Univex 450B (Oerlikon Leybold Vacuum, Germany)
Adapted for sputtering, thermal evaporation and electron beam processes.
Thin film coatings can be deposited on a wide variety of substrate materials such as: metals, plastics, semiconductors, ceramics and glass.
Substrate sizes that can be accommodated in the machine range anywhere from 1mm (any shape) up to 254mm (diameter).

Evaporation:
• The system contains two material pockets for deposition of single and multilayers.
Electron Beam Physical Vapor Deposition or EBPVD
• The system contains four material pockets for deposition of single and multilayers.
Sputtering
• DC sputtering for conducting materials. Up to 1000W
• RF sputtering for dielectric materials. Up to 600W

U7-E05. Wet Bench

• Wet Etching

Chemical bath system with several baths built into a safety cabinet made of anti-corrosive material (polypropylene). The cabinet is a closed unit and incorporates a ventilation system.
With the chemical bath system we can easily adapt the contents according to the requirements of the process, taking into account the polymer, resins or material to be etched.

U7-E04. Laser Lithography (Mask Plotter)

• Laser Lithography (Mask Plotter)

•- Optical autofocus using 4 mm write head.
•- Minimum feature size: 1.0 µm (200 nm pixel size, 5.7 mm2/min writing speed).
•- Expose small parts samples up through 8” wafers, including masks blanks for photomask fabrication.
•- Diode laser: 405 nm wavelength, 50 mW max. power.
•- Back to front side alignment (alignment accuracy: 250 nm).
•- Grayscale exposure for 3D structures.
•- Stability of the system ensured by a climate chamber that provides constant temperature (±0.1°C).
•- Equipped with an interferometer stage for maximum alignment accuracy.
•- The conversion software accepts standard CAD formats: CIF, DXF and GDSII.

U7-E03. UV optical Lithography (Mask Aligner)

• UV optical Lithography (Mask Aligner)

MJB4 Mask Aligner (SÜSS Microtech, Munich, Germany) is a precision instrument for high-resolution photolithography and is intended for use in research laboratories, small-series production and pilot projects.
The flexibility of the MJB4 is unsurpassed when exposing standard wafers and substrates and irregularly shaped substrates with a diameter of up to 100 mm or 4”x4” and various thicknesses.

• Hg lamp, 305nm to 450 nm wavelength and 350 W power.
• Soft-contact and hard-contact alignment. Adjusting range between 0 to 50 mm.
• 10x Optical microscope with diffraction reducing optics.
• 5” (125mm) Cr mask adapter available.
• Substrate size: from 10 mm to 4” (100 mm), thicknesses between 0.1 to 4 mm.
• Minimum resolution: 1um.
• Exposure modes: fixed power or fixed intensity.

U7-E02. ToF-SIMS (Time of the Flight Secondary Ion Mass Spectroscopy)

• ToF-SIMS (Time of the Flight Secondary Ion Mass Spectroscopy)

ION-TOF IV (IONTOF, Münster, Germany) equipped with the state-of-the –art Bi cluster primary ion gun for analysis, and O2 and Cs ion guns for sputtering in the depth profiling mode.
Charge compensation capability using a pulsed electron-gun and/or O2 flood gas allows surface analysis and depth profiling of highly insulating samples
Large sample stage capable of holding wafers up to 3″ in diameter/width and 0.5″ in thickness. Samples sizes from few mm up to 10cm. Motorized sample stage that allows for automated analysis of large areas. Heating/cooling stage.

• High mass resolution, to distinguish species of similar nominal mass (mass resolution is at least 0.00x amu); Particles with the same nominal mass (e.g. Si2 and Fe, both with amu = 56 ) can be clearly distinguish.
• Mass range of 0-10,000 amu; ions (positive or negative), isotopes, and molecular compounds (including polymers, organic compounds, and up to amino acids fragments) can be detected.
• High sensitivity for trace elements or compounds, on the order of ppm to ppb for most species;
• Elemental and chemical mapping on a sub-micron scale;
• Depth profiling capabilities; sequential sputtering of surfaces allow analysis of elemental composition on materials from 1nm up to 10µm in depth (typical sputtering rates are ~10nm/minute).
• Retrospective analysis. Every pixel of a ToF-SIMS map represents a full mass spectrum. This allows an analyst to retrospectively produce maps for any mass of interest, and to interrogate regions of interest (ROI) for their chemical composition via computer processing after the dataset has been instrumentally acquired.
• Surveys of all masses on material surfaces; these may include single ions (positive or negative), individual isotopes, and molecular compounds;
• Surface analysis of insulating and conducting samples;

U7-E01. Ebeam/SEM (Nova NanoSEM 230/Raith)

• Nova NanoSEM 230

›› High and Low Vacuum field emission Scanning
Electron Microscope (SEM ) incorporating:

•• Resolution: 1.6 nm at 1 kV (ETD and TLD detectors) in High Vacuum.
•• Resolution: 1.8 nm at 3 kV (LVD detectors) in Low Vacuum.
•• Field emission filament -> High-resolution images even of non-conductive samples.
•• Backscattered electron detector (vCD detector):
High-resolution images of backscattered electrons.
•• 6-channel preamplifier for detectors of solid state.
•• Compressor.
•• Cryo Can, anti-contamination system.
•• Thermoflex closed wáter circuit.
›› Electron beam lithography system with:
•• High writing resolution (maximum speed of 6 MHz and control of the dwell time < 2 ns). •• Electrostatic Beam Blanker. •• Picoammeter exchanger box. •• Keithley picoammeter. •• Advanced nanolithography system for microscope. •• Beam Blanker amplification electronics •• Software for correcting the Proximity Effect. •• Universal sample carrier for Lithography. •• EBL Starter kit.